Description
Features :
Type Designator: 2SD2399
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 30 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 4 A
Transition Frequency (ft): 40 MHz
Forward Current Transfer Ratio (hFE), MIN: 1000
Noise Figure, dB: –
Package: TO220F
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