Original 10N60 MOSFET N-Channel (600V, 10A)

FEATURES:

• New revolutionary high voltage technology
• Worldwide best RDS(on) in TO 247
• Ultra low gate charge
• Periodic avalanche rated

SPECIFICATIONS:

• Drain Current: I_D= 10A at T_C=25℃
• Drain Source Voltage: V_DS = 600V
• Static Drain-Source On-Resistance: R_DS(on) < 0.07 Ω
• Package: TO-247