Description
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.
This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength.
These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.
Type Designator: 50N06
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ – Maximum Power Dissipation: 120 W
|Vds|ⓘ – Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ – Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ – Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ – Maximum Drain Current: 50 A
Tjⓘ – Maximum Junction Temperature: 150 °C
Qgⓘ – Total Gate Charge: 30 nC
trⓘ – Rise Time: 100 nS
Cossⓘ – Output Capacitance: 430 pF
Rdsⓘ – Maximum Drain-Source On-State Resistance: 0.018 Ohm
Package: TO-220
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ – Maximum Power Dissipation: 120 W
|Vds|ⓘ – Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ – Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ – Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ – Maximum Drain Current: 50 A
Tjⓘ – Maximum Junction Temperature: 150 °C
Qgⓘ – Total Gate Charge: 30 nC
trⓘ – Rise Time: 100 nS
Cossⓘ – Output Capacitance: 430 pF
Rdsⓘ – Maximum Drain-Source On-State Resistance: 0.018 Ohm
Package: TO-220
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