Description
2SC3357
NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD
The 2SC3357 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band.
It has large dynamic range and good current characteristic
Type Designator: 2SC3357
SMD Transistor Code: RF
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.4 W
Maximum Collector-Base Voltage |Vcb|: 20 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 125 °C
Transition Frequency (ft): 6500 MHz
Forward Current Transfer Ratio (hFE), MIN: 40
Noise Figure, dB: –
Package: SOT89
Datasheet:
https://www.alldatasheet.com/datasheet-pdf/view/5865/NEC/2SC3357.html
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