Description

(O3407A )P-Channel Enhancement Mode Field Effect Transistor

Type Designator: AO3407A
Marking Code: X7*
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ – Maximum Power Dissipation: 1.4 W
|Vds|ⓘ – Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ – Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ – Maximum Gate-Threshold Voltage: 2.4 V
|Id|ⓘ – Maximum Drain Current: 4.3 A
Tjⓘ – Maximum Junction Temperature: 150 °C
Qgⓘ – Total Gate Charge: 9.2 nC
trⓘ – Rise Time: 5.5 nS
Cossⓘ – Output Capacitance: 100 pF
Rdsⓘ – Maximum Drain-Source On-State Resistance: 0.048 Ohm
Package: SOT23

datasheet :

https://pl-1.org/getproductfile.axd?id=12476&filename=AO3407.pdf