Description
Features :
Type Designator: K1307
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 48 W
Maximum Drain-Source Voltage |Vds|: 100 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 3 V
Maximum Drain Current |Id|: 18 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 72(max) nC
Rise Time (tr): 44 nS
Drain-Source Capacitance (Cd): 560 pF
Maximum Drain-Source On-State Resistance (Rds): 0.086(typ) Ohm
Package: TO220FP
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