Description

RSQ035P03TR

Type Designator: RSQ035P03
Marking Code: TM
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ – Maximum Power Dissipation: 1.25 W
|Vds|ⓘ – Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ – Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ – Maximum Gate-Threshold Voltage: 2.5 V
|Id| ⓘ – Maximum Drain Current: 3.5 A
Tj ⓘ – Maximum Junction Temperature: 150 °C
Qg ⓘ – Total Gate Charge: 9.2 nC
tr ⓘ – Rise Time: 35 nS
Cossⓘ – Output Capacitance: 180 pF
Rds ⓘ – Maximum Drain-Source On-State Resistance: 0.065 Ohm
Package: TSMT6

Features
1) Low On-resistance.(65mΩ at 4.5V)
2) High Power Package.
3) High speed switching.
4) Low voltage drive. (4V)

Applications
DC-DC converter

Datasheet:

https://alltransistors.com/adv/pdfview.php?doc=rsq035p03.pdf&dire=_rohm